发明名称 |
Method for forming layer for trench isolation structure |
摘要 |
A method for forming a thermal oxide layer on the surface of a semiconductor substrate exposed during a semiconductor fabricating process. The thermal oxide layer is to be thin to minimize silicon substrate defects caused by volume expansion. A chemical vapor deposition (CVD) layer is then formed on the thin thermal oxide layer, creating a required thickness. The thin thermal oxide layer and the CVD material layer are formed in the same CVD apparatus. As a result, a process can be simplified and a particle-leading pollution can be prevented.
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申请公布号 |
US7387943(B2) |
申请公布日期 |
2008.06.17 |
申请号 |
US20020083756 |
申请日期 |
2002.02.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM DO-HYUNG;KIM SUNG-EUI |
分类号 |
H01L21/205;H01L21/76;H01L21/31;H01L21/469;H01L21/762 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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