FLASH MEMORY DEVICE AND METHOD FOR SENSING CHANNEL BOOSTING LEVEL

摘要

A flash memory device for measuring a channel boosting voltage and a method thereof are provided to measure the channel boosting voltage in a floating node state accurately, in case of global self boosting and local boosting. A cell string(102) includes a plurality of cells. A channel selection part(106) performs a function of selecting at least one channel among channels of the cell string. A sensing current measurement part(108) performs a function of measuring a current in the program operation condition of the channel selected by the channel selection part, among the channels of the cell string. A reference voltage/current measurement part(104) performs a function of measuring a voltage or a current in the reference condition of the channel selected by the channel selection part, among the channels of the cell string.