SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR REPAIRING THE SAME

摘要

A semiconductor memory device and a method for repairing the same are provided to improve a yield thereof by arranging high-performance cells in a redundancy cell array region. A main cell array region(100) includes a plurality of main bit lines. A first redundancy cell array region(210) having a first redundancy bit line is formed at one side of the main cell array region. A first dummy cell array region(310) having first dummy bit lines(DBL1) is formed at one side of the main cell array region. A second redundancy cell array region(220) having a second redundancy bit line is formed at the other side of the main cell array region. A second dummy cell array region(320) having second dummy bit lines(DBL2) is formed at the other side of the main cell array region. The first and second redundancy cell array regions are arranged near to the main cell array region in comparison with the first and second dummy cell array regions.