| 摘要 |
A crystalline silicon thin film solar cell using a thermal oxidation layer is provided to effectively eliminate electron-hole recombination by isolating unit cells using a thermal oxide layer. A crystalline silicon thin film solar cell includes at least two unit cells. The unit cell has an anti-reflection layer(420) formed on a transparent substrate, transparent conductive oxide electrodes(431,432) formed on the anti-reflection layer, first electrodes(441,442) formed on the oxide electrode, generation regions(451,452), second electrodes(461,462) formed on the generation regions, insulating layers(471,472) covering upper portions of the second electrodes, and sides of the first electrodes, the generation regions and the second electrodes, and a conductor layer electrically connecting the unit cells. The insulating layer is a thermal oxidation layer formed by thermal oxidization. |
