| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor substrate with electric characteristics improved by preventing natural oxidation and its manufacturing method, and to provide a liquid crystal display panel and an electroluminescent display panel that have the substrate. SOLUTION: The thin-film transistor includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on a base substrate. The active layer is formed over the gate electrode to cover the gate electrode. The source electrode and the drain electrode are formed separately over the active layer with a predetermined interval. The buffer layer is formed between the active layer and the source and drain electrodes respectively, and comprises a plurality of materials having a continuously variable content ratio, depending on its thickness. The buffer layer is formed between the source and drain electrodes and the active layer, thereby preventing contact resistance due to oxidation from increasing, so that the electrical characteristics of the thin-film transistor can be improved. COPYRIGHT: (C)2007,JPO&INPIT |
