SURFACE EMITTING LASER DEVICE

摘要

A VCSEL device includes a polyimide having a larger thickness (d 1 ) on the surface of a semiconductor layer structure in a peripheral area 54 , which is separated from a mesapost by an annular groove 52 . The top surface of the central mesapost 30 is located at a lower position compared to the top surface of the peripheral area 54 . A structure is obtained wherein the mesapost is not contacted by a jig or probe during handling the device in the test or assembly thereof.