| 发明名称 |
GROUP III NITRIDE CRYSTAL AND GROWING METHOD THEREOF |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a group III nitride crystal having a low dislocation density on the crystal growth plane after the crystal is grown and to provide a growing method of the crystal. <P>SOLUTION: The method for growing a group III nitride crystal 11 on a substrate 10 is characterized in that while an Al<SB>x</SB>Ga<SB>y</SB>In<SB>1-x-y</SB>N crystal (wherein 0≤x, 0≤y and x+y≤1) as a group III nitride crystal 11 is grown, at least a part of dislocation remaining in the Al<SB>x</SB>Ga<SB>y</SB>In<SB>1-x-y</SB>N crystal is made to propagate in a direction substantially parallel to the crystal growth plane of the Al<SB>x</SB>Ga<SB>y</SB>In<SB>1-x-y</SB>N crystal and discharged to the outer periphery of the Al<SB>x</SB>Ga<SB>y</SB>In<SB>1-x-y</SB>N crystal. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
| 申请公布号 |
JP2007119325(A) |
申请公布日期 |
2007.05.17 |
| 申请号 |
JP20050316956 |
申请日期 |
2005.10.31 |
| 申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
FUJIWARA SHINSUKE;KAMIMURA TOMOYOSHI;NAKAHATA HIDEAKI;OKAHISA TAKUJI;UEMATSU KOJI;OKUI MANABU |
| 分类号 |
C30B29/38;C23C16/34;C30B25/18;H01L21/205 |
主分类号 |
C30B29/38 |
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