| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method capable of obtaining a desired etching pattern without loosing a shape by preventing an etching mask from being deformed. SOLUTION: The etching method of etching a processed layer 2 formed in a front surface of processed workpiece W comprises: a resist forming process of forming a resist layer 6 in a front surface of the processed workpiece; a mask forming process of forming an etching mask 10 patternized by forming a designated depression 8 for etching in the resist layer; a plasma resistance film forming process of forming a plasma resistance film 100, on a whole surface of the etching mask including a bottom and side of the depression for etching; a bottom plasma resistance film removing process of removing the plasma resistance film formed in the bottom of the depression for etching; and this etching process of etching the processed layer using the etching mask covered with the plasma resistance film as a mask. COPYRIGHT: (C)2007,JPO&INPIT
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