| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To cut an external semiconductor layer with a very simple cut knife with a straight-shaped blade, and sufficiently minimize surface roughness of an insulating layer after cut. <P>SOLUTION: When the external semiconductor layer 12 is cut by rotating the cut knife 14 around the external semiconductor layer 12 of a power cable 10 and advancing in the cable axial direction, the plate-shaped cut knife having the straight-shaped blade 16 is used as the cut knife 14. The cut knife 14 is disposed on the external semiconductor layer 12 with the plate surface flat so that the direction of the blade 16 may become oblique to the cable axial direction, and only the middle part in the length direction of the blade 16 is bit into the external semiconductor layer 12 to cut the external semiconductor layer 12. The angleαto the cable axial direction of the blade 16 of the cut knife 14 is set at 20-25°. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
