| 摘要 |
PROBLEM TO BE SOLVED: To suppress etching of SPM solution with respect to a nitride film formed on a surface of a semiconductor substrate. SOLUTION: In a manufacturing method of a semiconductor device, a solution comprising sulphuric acid and hydrogen peroxide solution is heated, solution is supplemented with sulphuric acid of a prescribed amount and hydrogen peroxide solution of the prescribed amount at prescribed intervals, sulphuric acid of solution is maintained to not less than prescribed concentration, the semiconductor substrate is immersed in solution, and the semiconductor substrate is cleaned. Furthermore, a resist film is formed on the semiconductor substrate, a resist pattern is formed on the resist film, and the semiconductor substrate is worked with the resist pattern as a mask. A solution comprising sulphuric acid and hydrogen peroxide solution is heated, solution is supplemented with the sulphuric acid of the prescribed amount and hydrogen peroxide solution of the prescribed amount at the prescribed intervals, and sulphuric acid of the solution is maintained to a level that is not less than prescribed concentration. The semiconductor substrate is immersed in the solution, and the resist pattern is removed. COPYRIGHT: (C)2007,JPO&INPIT
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