| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device having a memory cell capable of improving a static noise margin (SNM) when a reading/writing operation. SOLUTION: The device includes a NMOS transistor N4 of which the gate is connected to a first node of a flip-flop, a NMOS transistor N6 of which the gate is connected to a second node of a flip-flop, a transfer gate N3 of which the one end of the current path is connected to one end of the current path of the NMOS transistor N4, a transfer gate N5 of which the one end of the current path is connected to one end of the current path of the NMOS transistor N6, and a pair of bit lines. Further, the device includes a diode D2 of which an anode is connected to the first node of the flip-flop and the cathode is connected to one end of the current path of the transfer gate N5, and a diode D1 of which an anode is connected to the second node of the flip-flop and the cathode is connected to one end of the current path of the transfer gate N3. COPYRIGHT: (C)2007,JPO&INPIT
|
