发明名称 |
Semiconductor devices including transistors and methods of fabricating the same |
摘要 |
A semiconductor device includes a transistor. The transistor includes a substrate having an inclined surface, a first upper surface extending from a lower portion of the inclined surface, and a second upper surface extending from an upper end of the inclined surface. A gate stack structure is formed on the inclined surface and includes a gate electrode. A first impurity region formed on one of the first and second upper surfaces contacts the gate stack structure. A second impurity region formed on the second upper surface contacts the gate stack structure. A channel between the first and second impurity regions is formed along the inclined surface in a crystalline direction.
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申请公布号 |
US2007111605(A1) |
申请公布日期 |
2007.05.17 |
申请号 |
US20060600741 |
申请日期 |
2006.11.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
ZHANG XIAOXIN;XIANYU WENXU;NOGUCHI TAKASHI;CHO HANS S.;YIN HUAXIANG |
分类号 |
H01R24/00 |
主分类号 |
H01R24/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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