发明名称 |
METHOD FOR ETCHING AN OBJECT TO BE PROCESSED |
摘要 |
An object to be process has a structure having an SiC film 61 and an organic Si-low dielectric constant film 62 formed on the SiC film 61. The SiC film 61 is etched using a plasma produced from an etching gas and using the organic Si low-dielectric constant film 62 as a mask. The etching gas contains CH<SUB>2</SUB>F<SUB>2 </SUB>or CH<SUB>3</SUB>F.
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申请公布号 |
US2007111530(A1) |
申请公布日期 |
2007.05.17 |
申请号 |
US20070620501 |
申请日期 |
2007.01.05 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
FUSE TAKASHI;FUJIMOTO KIWAMU;YAMAGUCHI TOMOYO |
分类号 |
H01L21/302;H01L21/82;H01L21/027;H01L21/3065;H01L21/311;H01L21/312;H01L21/768 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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