| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a light emitting element in which a light emitting element superior in luminous efficiency and durability (lifetime) can be manufactured, a light emitting element manufactured by such a manufacturing method of the light emitting element, a light emitting device with high reliability equipped with this light emitting element, and electronic equipment. SOLUTION: An active matrix type display device 10 has a substrate 21 and a circuit 22 formed on the substrate 21. A pixel region is formed on the circuit part 22 corresponding to each driving TFT 24, and an organic EL element 1 is installed in each pixel region. A positive electrode buffer layer 8 which the organic EL element 1 comprises is formed by changing a polysiloxane derivative into SiO<SB>2</SB>by irradiating ultraviolet rays on the coating film of the polysiloxane derivative obtained by the plasma polymerization of a precursor (monomer). COPYRIGHT: (C)2007,JPO&INPIT
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