| 摘要 |
A semiconductor device according to the present invention, which comprises a MISFET, has a semiconductor layer ( 3 ) having a recessed portion ( 101 ) formed in the surface thereof, the recessed portion ( 101 ) having an opening the outer circumference of which is closed, a gate insulating film ( 13 ) formed so as to cover at least the inner face of the recessed portion ( 3 ), a gate electrode ( 14 ) filling the recessed portion ( 101 ) such that the gate insulating film ( 13 ) is interposed between the gate electrode ( 14 ) and the inner face of the recessed portion ( 101 ), and a pair of source/drains ( 102 ), located on both sides of the gate electrode ( 14 ) when viewed in plan and formed to a predetermined depth from the surface of the semiconductor layer ( 3 ).
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