发明名称 |
SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF |
摘要 |
In order to suppress deterioration in charge balance and maintain excellent withstand voltage characteristics after forming a super junction structure on a semiconductor substrate, a plurality of columnar first epitaxial layers are respectively formed on a surface of a substrate main body at predetermined intervals, and a plurality of second epitaxial layers are respectively formed in trenches between the plurality of first epitaxial layers. A concentration distribution of a dopant included in the first epitaxial layer in a surface parallel with the surface of the substrate main body is configured to match with a concentration distribution of a dopant included in the second epitaxial layer in a surface parallel with the surface of the substrate main body.
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申请公布号 |
US2007108444(A1) |
申请公布日期 |
2007.05.17 |
申请号 |
US20060383782 |
申请日期 |
2006.05.17 |
申请人 |
SUMCO CORPORATION AND DENSO CORPORATION |
发明人 |
NOGAMI SYOUJI;YAMAOKA TOMONORI;YAMAUCHI SHOICHI;YAMAGUCHI HITOSHI |
分类号 |
C30B29/66 |
主分类号 |
C30B29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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