| 摘要 |
Embodiments of the invention provide methods for depositing a material onto a surface of a substrate by using one or more electroless, electrochemical plating, CVD and/or ALD processes. Embodiments of the invention provide a method for depositing a seed layer on a substrate with an electroless process and to subsequently fill interconnect features on the substrate with an ECP process on a single substrate processing platform. Other aspects provide a method for depositing a seed layer on a substrate, fill interconnect features on a substrate, or sequentially deposit both a seed layer and fill interconnect features on the substrate. One embodiment provides a method for forming a capping layer over substrate interconnects. Methods include the use of a vapor dryer for pre- and post-deposition cleaning of substrates as well as a brush box chamber for post-deposition cleaning.
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