| 摘要 |
<p>A composition for coating a photoresist pattern includes water and a compound including a repeating unit represented by Formula 1. The composition is coated on a previously formed pattern, thereby effectively reducing a size of a space or contact hole of photoresist pattern. A method for forming a photoresist pattern using the composition is usefully applied to all semiconductor processes for forming a fine pattern. wherein R<SUB>1 </SUB>to R<SUB>6</SUB>, R', R'' and n are defined in the specification.</p> |
