发明名称 PROCESS FOR FABRICATING THIN FILM DEVICE, ELECTRO-OPTICAL DEVICE, ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a process for fabricating a thin film device in which high density mounting and thinning can be realized through utilization of a transfer technology. SOLUTION: The process for fabricating a thin film device comprises a step for forming a layer (110) being transferred including a thin film device on a transferring substrate (100) through a first strip layer (102) being stripped upon application with predetermined energy, a step for bonding the layer being transferred to a temporary transfer substrate (116), and a step for stripping the transferring substrate (100) from the layer (110) being transferred by imparting energy to cause interface stripping and/or in-layer stripping in the first strip layer (102) thus forming a pair of multilayer structures where the layer (110) being transferred is bonded to the temporary transfer substrate (116). The fabrication process further comprises a step for bonding the layers (110) being transferred of the pair of multilayer structures, respectively, to the opposite sides of a substrate (120) being transferred, and a step for separating the temporary transfer substrate (116) from each layer being transferred thus transferring respective layers (110) being transferred to the opposite sides of the substrate (120) being transferred. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006120726(A) 申请公布日期 2006.05.11
申请号 JP20040304645 申请日期 2004.10.19
申请人 SEIKO EPSON CORP 发明人 KODAIRA YASUAKI
分类号 H01L27/12;H01L21/02;H01L21/336;H01L29/786 主分类号 H01L27/12
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