| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing equipment which nitrides an oxide film and an oxynitride film whose film thickness is so thin as to have 0.4 nm or less, with stability while keeping increase of film thickness to the minimum. SOLUTION: The substrate processing equipment comprises a processing vessel which defines a processing space and is provided with a holding table for holding a to-be-processed substrate in the processing space; a first radical source which is provided on the first end part side to the holding table, on the processing vessel; a second radical source which is provided on the first end part side to the holding table, on the processing vessel; a first exhaust channel which is provided on the second end part side facing the first end part to the holding table, on the processing vessel, to exhaust the processing space to a first processing pressure; and a second exhaust channel which is provided on the second end part side to the holding table, on the processing vessel, to exhaust the processing space to a second processing pressure. COPYRIGHT: (C)2006,JPO&NCIPI
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