发明名称 |
CMOS image sensor and related method of operation |
摘要 |
Provided is a complementary metal oxide semiconductor (CMOS) image sensor. The CMOS image sensor includes a pixel array unit having a matrix-type array of unit pixels, each unit pixel including a charge transfer element transferring charge collected in a photoelectric conversion element to a charge detection element. The charge transfer element also receives a boosted voltage signal higher than an external power voltage.
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申请公布号 |
US2006097132(A1) |
申请公布日期 |
2006.05.11 |
申请号 |
US20050267312 |
申请日期 |
2005.11.07 |
申请人 |
NAM JUNG-HYUN;RHO JAE-SEOB |
发明人 |
NAM JUNG-HYUN;RHO JAE-SEOB |
分类号 |
H01L27/00;H04N5/357;H04N5/372;H04N5/374;H04N5/378 |
主分类号 |
H01L27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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