PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

摘要

A plasma processing method and apparatus capable of enhancing the uniformity of crystalline-to-amorphous transformation. While introducing a predetermined gas through a gas inlet port (11) into a vacuum vessel (1) from gas supply (2), the gas in the vacuum vessel (1) is discharged through a discharge port (12) by means of a turbo molecular pump (3) serving as an evacuating device, and the pressure in the vacuum vessel (1) is kept at a predetermined pressure by a pressure regulating valve (4). High-frequency power of 13.56 MHz is supplied to a coil (8) provided near a dielectric window (7) opposed to a sample electrode (6) by a high-frequencypower supply (5), and inductive-coupling plasma is produced in the vacuum vessel (1). A high-frequency power supply (10 for supplying high-frequency power to the sample electrode (6) is provided and functions as a voltage source for controlling the potential of the sample electrode (6). By devising the constitution of the sample electrode (6), the crystalline layer in the surface of a silicon substrate (9) could be transformed into an amorphous one uniformly.