| 发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE, SURFACE-EMISSION LASER, SURFACE-EMISSION LASER ARRAY, IMAGE FORMING APPARATUS, OPTICAL PICKUP SYSTEM, OPTICAL TRANSMISSION MODULE, OPTICAL TRANSCEIVING MODULE, AND OPTICAL COMMUNICATION SYSTEM |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which is equipped with a quantum well active layer where carriers are sufficiently trapped; and which has a high gain, excellent temperature characteristics, a low threshold value, a high output power, and excellent reliability. SOLUTION: A lower clad layer, a lower optical guide layer, an active layer, an upper optical guide layer, and an upper clad layer are formed on a GaAs substrate for the formation of the semiconductor light emitting device. The above active layer is equipped with a Ga<SB>c</SB>In<SB>1-c</SB>P<SB>d</SB>As<SB>1-d</SB>(0<c<1, 0≤d≤1) compressive strain quantum well active layer and a Ga<SB>e</SB>In<SB>1-e</SB>P<SB>f</SB>As<SB>1-f</SB>(0<e<1, 0≤f≤1) tensile strain barrier layer, an (Al<SB>a</SB>Ga<SB>1-a</SB>)<SB>b</SB>In<SB>1-b</SB>P (0<a≤1, 0<b<1) layer having a larger band gap energy than the active layer is used as, at least, a part of either of the lower clad layer and the upper clad layer, and the absolute value of the strain volume of the barrier layer is set larger than that of the quantum well active layer. COPYRIGHT: (C)2006,JPO&NCIPI
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