| 摘要 |
A structure is provided which includes a semiconductor device region including a first portion and a second portion. A current-conducting member is provided, which extends horizontally over the first portion but not over the second portion. A first film, such as a stress-imparting film, extends over the second portion and only partially over the current-conducting member to expose a contact portion of the member. A first contact via is provided in conductive communication with the contact portion of the member, the first contact via having a self-aligned silicide-containing region. A second contact via is provided in conductive communication with the second portion of the semiconductor device region, the second contact via extending through the first film.
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