| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a contact structure which prevents unevenness of a substrate gap in each substrate even when the film thickness of an interlayer dielectric fluctuates and which can decrease contact failure caused by a conductive spacer. <P>SOLUTION: A square pixel region where a thin film transistor and a pixel electrode are positioned is formed on a substrate, and a common contact portion is formed around the pixel region. One side line of the substrate is provided with a plurality of terminals to externally supply signals or power. Wiring to electrically connect a common contact part to the terminal is laid around the periphery of the pixel region, and the wiring is formed at the same time of forming a gate electrode, source electrode or drain electrode of the thin film transistor. At least one terminal in the plurality of terminals is electrically connected to the common contact part. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
