发明名称 |
Fabrication of a low defect germanium film by direct wafer bonding |
摘要 |
A method of fabricating a low defect germanium thin film includes preparing a silicon wafer for germanium deposition; forming a germanium film using a two-step CVD process, annealing the germanium thin film using a multiple cycle process; implanting hydrogen ions; depositing and smoothing a layer of tetraethylorthosilicate oxide (TEOS); preparing a counter wafer; bonding the germanium thin film to a counter wafer to form a bonded structure; annealing the bonded structure at a temperature of at least 375° C. to facilitate splitting of the bonded wafer; splitting the bonded structure to expose the germanium thin film; removing any remaining silicon from the germanium thin film surface along with a portion of the germanium thin film defect zone; and incorporating the low-defect germanium thin film into the desired end-product device.
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申请公布号 |
US2006099773(A1) |
申请公布日期 |
2006.05.11 |
申请号 |
US20040985444 |
申请日期 |
2004.11.10 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
MAA JER-SHEN;LEE JONG-JAN;TWEET DOUGLAS J.;HSU SHENG T. |
分类号 |
H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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