A SEMICONDUCTOR DEVICE INCLUDING SEMICONDUCTOR REGIONS HAVING DIFFERENTLY STRAINED CHANNEL REGIONS AND A METHOD OF MANUFACTURING THE SAME

摘要

By locally modifying the intrinsic stress of a dielectric layer laterally enclosing gate electrode structures of a transistor configuration formed in accordance with in-laid gate techniques, the charge carrier mobility of different transistor elements may individually be adjusted. In particular, in in-laid gate structure transistor architecture, NMOS transistors and PMOS transistors may receive a tensile and a compressive stress, respectively.