| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, an SRAM, and the manufacturing method of the semiconductor device wherein the process of disposing its contact in its narrow active region can be easily performed. SOLUTION: The semiconductor device has an SOI substrate 10, an active region 3a, a first insulation film 3b (a completely separating insulation film), a second insulation film 3c (a partially separating insulation film), and a contact portion 4. Hereupon, the active region 3a is formed inside the surface of an SOI layer 3. Also, the first insulation film 3b is formed in one side surface of the active region 3a, and is formed from the surface of the SOI layer 3 to a buried insulation film 2 across. Further, the second insulation film 3c is formed in the other side surface of the active region 3a, and is formed from the surface of the SOI layer 3 to a predetermined depth not to reach the buried insulation film 2 across. Moreover, the contact portion 4 is disposed in a plan view more closely to the side of the first insulation film 3b existing thereon than the center of the active region 3a. COPYRIGHT: (C)2006,JPO&NCIPI
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