发明名称 |
High performance diode-implanted voltage-controlled poly resistors for mixed-signal and RF applications |
摘要 |
A p-type polysilicon resistor formed in the inter-level dielectric layer contains an implanted diode. A positive voltage applied to the diode modulates the depletion region of the diode and changes the absolute resistance of the p-type polysilicon resistor. This modulation occurs not only horizontally, but also vertically. The fact that the tunable resistor is a p-type polysilicon resistor means that this structure can easily be integrated into the process since polysilicon is used as a gate material for basic CMOS processing.
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申请公布号 |
US2006097349(A1) |
申请公布日期 |
2006.05.11 |
申请号 |
US20040984286 |
申请日期 |
2004.11.09 |
申请人 |
SHAW JONATHAN A;ERICKSON SEAN;NUNN KEVIN |
发明人 |
SHAW JONATHAN A.;ERICKSON SEAN;NUNN KEVIN |
分类号 |
H01L29/00 |
主分类号 |
H01L29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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