| 摘要 |
PROBLEM TO BE SOLVED: To obtain a gigantic resistance change rate based on point contact with improved reproducibility by accelerating the quantization of conduction at a conductor in a spin-valve GMR element in which a point contact structure by a magnetic metal is applied. SOLUTION: A spin-valve magnetoresistive film 2 comprises a magnetic adhesive layer 5, a magnetic free layer 7, and an intermediate layer 6 interposed between them. The intermediate layer 6 has the conductor 15 made of a nonmagnetic metal material arranged in an insulating layer 14. The ferromagnetic film 7 laminated on the intermediate layer 6 comprises a vertical orientation 16 that is arranged at the upper portion of the conductor 15, and is subjected to crystal growth nearly in the direction perpendicular to the film surface; and a non-vertical orientation 17 that is present at a part other than the vertical orientation 16. The magnetoresistive element 1 has a pair of electrodes 3, 4 for energizing a sense current in a direction perpendicular to the film surface of the magnetoresistive film 2. COPYRIGHT: (C)2006,JPO&NCIPI
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