发明名称 Flash memory system and erase method thereof
摘要 A flash memory system in which data for erase stored in a flash memory for main storage is stored in a flash memory for erase information storage, the data for erase stored in the flash memory for main storage is erased firstly, and the data for erase stored in the flash memory for erase information storage is then erased secondarily, and erase method thereof are provided. Twice erase commands are performed, unlike an existing flash memory system in which data is erased at once. Therefore, it is possible to prevent data from being erased by mistake when the data is stored.
申请公布号 US2006090029(A1) 申请公布日期 2006.04.27
申请号 US20040011962 申请日期 2004.12.14
申请人 CHANG SEUNG H 发明人 CHANG SEUNG H.
分类号 G06F12/00 主分类号 G06F12/00
代理机构 代理人
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