| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus and a method of plasma processing which can restrict an electron shading effect and is configured as a damage-free wafer processing without making ion or electron of high energy. <P>SOLUTION: The apparatus of plasma processing includes a plasma generator 100, a wafer processor 200 in which a wafer 15 to be processed is arranged, a metal grid 22 for separating the plasma generator and the wafer processor, an upper electrode 21 arranged in the plasma generator and having a porous silicon layer 27 for emitting electron, a gas introducing unit for introducing gas, and a gas introducing port for introducing a process gas. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
