| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element capable of irradiating the laser beam whose configuration shows light intensity peaks at two or more angles as a lateral FFP (Far Field Pattern) in simpler structure, and to provide a manufacturing method. SOLUTION: An insulating layer 12 is formed in such a manner that it may constrict the path of the current supplied to an active layer AL inside an element from an electrode 13 in a stripe shape provided in the element upper part from both sides in a lateral direction under this electrode 13. Moreover, the width L2 that constricts a current route from both the edges of this active layer AL as a part of the insulating layer 12 in the upper part of the active layer AL is set as "10μm" or below. COPYRIGHT: (C)2006,JPO&NCIPI
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