| 发明名称 |
Method of forming a solution processed transistor having a multilayer dielectric |
| 摘要 |
Embodiments of methods, apparatuses, devices, and/or systems for forming a solution processed transistor having a multilayer dielectric are described.
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| 申请公布号 |
US2006088962(A1) |
申请公布日期 |
2006.04.27 |
| 申请号 |
US20040972229 |
申请日期 |
2004.10.22 |
| 申请人 |
HERMAN GREGORY S;MARDILOVICH PETER;HOFFMAN RANDY;KRAMER LAURA;ULMER KURT |
发明人 |
HERMAN GREGORY S.;MARDILOVICH PETER;HOFFMAN RANDY;KRAMER LAURA;ULMER KURT |
| 分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
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