| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a through electrode penetrating a semiconductor substrate in a direction of its width by which the number of steps can be reduced and step control be eased. SOLUTION: The method for forming a through electrode includes a first step to form an etching mask 12 on one surface of a semiconductor substrate 10, and an etching stop layer 11 on the other surface thereof respectively; a second step to etch an area of the substrate 10 exposing from an opening 13 formed in the etching mask 12 up to the etching stop layer 11 so as to form a recessed part 14; a third step to form an insulating film 11a on the internal surface of the recessed part 14 and one surface of the substrate 10, and to form a conductor 15 in the recessed part 14 thereafter; a fourth step to form a first wiring conductor 16a connected electrically with the conductor 15 on one surface of the substrate 10, and to make an opening 18 in the etching stop layer 11 comprising the bottom surface of the recessed part 14 so as to exposed the conductor 15 thereafter; and a fifth step to form a second wiring conductor 17a connected electrically with the conductor 15 exposing from the opening 18. COPYRIGHT: (C)2006,JPO&NCIPI
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