发明名称 |
Semiconductor device and semiconductor device manufacturing method |
摘要 |
A technique is provided which enables formation of nitride semiconductor layers with excellent flatness and excellent crystallinity on a gallium nitride substrate (GaN substrate), while improving the producibility of the semiconductor device using the GaN substrate. A gallium nitride substrate is prepared which has an upper surface having an off-angle of not less than 0.1° nor more than 1.0° in a <1-100> direction, with respect to a (0001) plane. Then, a plurality of nitride semiconductor layers including an n-type semiconductor layer are stacked on the upper surface of the gallium nitride substrate to form a semiconductor device such as a semiconductor laser.
|
申请公布号 |
US2006086948(A1) |
申请公布日期 |
2006.04.27 |
申请号 |
US20050252734 |
申请日期 |
2005.10.19 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
OHNO AKIHITO;TAKEMI MASAYOSHI;TOMITA NOBUYUKI |
分类号 |
H01L21/00;H01L33/16;H01L33/32 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|