发明名称 Circuit with high power density applicability
摘要 A power control circuit is presented. The circuit includes a pair of parallel optocoupler/logic stages and a pair of parallel voltage-to-current driver stages electrically coupled to a halfbridge stage in the order described. An input signal is communicated to the optocoupler/logic stage and processed therein to produce two distinctly separate but complimentary waveforms. Complimentary waveforms are communicated to the voltage-to-current driver stage to drive a paired arrangement of JFET switches. Thereafter, the JFET switches communicate with the halfbridge stage to control function of BJT switches. BJT switches are sequenced to produce a high power output. The present invention has immediate applicability to power conditioning, control, and distribution systems, as well as other applications which include or rely on silicon power transistors.
申请公布号 US2006087349(A1) 申请公布日期 2006.04.27
申请号 US20050258791 申请日期 2005.10.26
申请人 BIRD ROSS W;SHEA BRIAN;GOEHRIG MICHAEL;SAVITZ CHAD 发明人 BIRD ROSS W.;SHEA BRIAN;GOEHRIG MICHAEL;SAVITZ CHAD
分类号 H03B1/00 主分类号 H03B1/00
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