| 摘要 |
PROBLEM TO BE SOLVED: To provide a storage device capable of reducing power consumption and increasing an access speed without requiring any complicated reading circuit. SOLUTION: This storage device is constituted in such a manner that a memory cell is provided with a memory element for executing writing by applying a voltage equal to or more than a first threshold voltage and erasing by applying a voltage equal to or more than a second threshold voltage and a MOS transistor serially connected to the memory element, and such memory cells are arranged in a matrix. The resistance value of the MOS transistor during the reading of the memory element is different from that during the writing or erasing of the memory element, and a voltage applied to the memory cell during the reading of the memory element is set equal to that applied during the writing or erasing of the memory element. COPYRIGHT: (C)2006,JPO&NCIPI |
