| 摘要 |
PROBLEM TO BE SOLVED: To increase the number of semiconductor wafers which are produced in one process and on the surfaces of which thin films of semiconductor crystals are grown by changing the positions of pinions integrally provided in self-rotating susceptors. SOLUTION: A vapor growth device has a feed gas introducing port, a heater which heats the semiconductor wafers, and an exhaust port. At the same time, the device also has a plurality of self-rotating susceptors respectively holding the semiconductor wafers, and a disk-like rotating susceptor on which the self-rotating susceptors are installed in rotatable states through bearings. The plurality of self-rotating susceptors are arranged in an annular state in the peripheral edge of the disk-like rotating susceptor and, at the same time, the pinions respectively formed in the outer peripheries of the self-rotating susceptors are engaged with a common internal gear positioned on the outside of the pinions. In addition, the pinions are integrally formed with the self-rotating susceptors so that the pinions may be positioned above the bearings. COPYRIGHT: (C)2006,JPO&NCIPI
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