| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor device which can realize a high breakdown voltage and restrain frequency dispersion, and to provide its manufacturing method. <P>SOLUTION: A mask material formed of an insulating film is formed on a first nitride semiconductor layer to coat a control electrode formation region, and a second nitride semiconductor layer which consists of a nitride semiconductor layer comprising at least one of iron, carbon, zinc or magnesium as impurity and does not comprise aluminum is selectively formed on the exposed first nitride semiconductor layer. Thereafter, a control electrode is formed on the mask material or by removing the mask material. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
