| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a manganese-doped gallium nitride nano-wire expected to be applied for a magnetic sensor, an actuator, a light-emitting diode or the like. <P>SOLUTION: The manganese-doped gallium nitride nano-wire having 100-500 nm diameter and several tens micrometer length is manufactured by heating a mixture of gallium oxide powder, manganese phosphide powder and manganese dioxide powder at 1,353-1,423K temperatures for 0.5-1 hr while passing ammonia gas at 100-400 sccm flow rate. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
