发明名称 Memory array bit line coupling capacitor cancellation
摘要 Capacitive coupling correction circuits are coupled between adjacent parallel dynamic (pre-charged) or static conductors. The capacitive coupling correction circuits effectively isolate a low voltage applied to a first conductor from a high pre-charged voltage stored on an adjacent second conductor (or vice versa). The adjacent parallel conductors can be bit lines of a memory cell. Each capacitive coupling correction circuit can include an inverter having an input terminal coupled to the first conductor, and an output terminal coupled to a first plate of a capacitor. A second plate of the capacitor is coupled to the second conductor. The capacitance of the capacitor is selected to be identical to a parasitic capacitance between the first and second conductors. As a result, there is a zero net voltage effect between the first and second conductors. The capacitive coupling correction circuits may be distributed along the length of the first and second conductors.
申请公布号 US7443747(B2) 申请公布日期 2008.10.28
申请号 US20040997708 申请日期 2004.11.23
申请人 INTEGRATED DEVICE TECHNOLOGY, INC. 发明人 LIEN CHUEN-DER;YEH TZONG-KWANG HENRY
分类号 G11C7/00 主分类号 G11C7/00
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