| 摘要 |
A fin type field effect transistor includes a semiconductor substrate, an active fin, a first hard mask layer pattern, a gate insulation layer pattern, a first conductive layer pattern, and source/drain regions. The active fin includes a semiconductor material and is formed on the substrate and extends in a direction away from a major surface of the substrate. The first hard mask layer pattern is formed on a distal surface of the active fin from the substrate. The gate insulation layer is formed on a sidewall portion of the active fin. The first conductive layer pattern includes a metal silicide and is formed on surfaces of the substrate and the gate insulation layer pattern, and on a sidewall of the first hard mask pattern. The source/drain regions are formed in the active fin on opposite sides of the first conductive layer pattern.
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