发明名称 Systems and methods that selectively modify liner induced stress
摘要 The present invention facilitates semiconductor fabrication by providing methods of fabrication that selectively apply strain to multiple regions of a semiconductor device. A semiconductor device having one or more regions is provided ( 102 ). A strain inducing liner is formed over the semiconductor device ( 104 ). A selection mechanism, such as a layer of photoresist or UV reflective coating is applied to the semiconductor device to select a region ( 106 ). The selected region is treated with a stress altering treatment that alters a type and/or magnitude of stress produced by the selected region ( 108 ).
申请公布号 US7442597(B2) 申请公布日期 2008.10.28
申请号 US20050049275 申请日期 2005.02.02
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 TSUI TING Y.;PAPA RAO SATYAVOLU S.;BU HAOWEN;KRAFT ROBERT
分类号 H01L21/8238 主分类号 H01L21/8238
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