发明名称 |
Systems and methods that selectively modify liner induced stress |
摘要 |
The present invention facilitates semiconductor fabrication by providing methods of fabrication that selectively apply strain to multiple regions of a semiconductor device. A semiconductor device having one or more regions is provided ( 102 ). A strain inducing liner is formed over the semiconductor device ( 104 ). A selection mechanism, such as a layer of photoresist or UV reflective coating is applied to the semiconductor device to select a region ( 106 ). The selected region is treated with a stress altering treatment that alters a type and/or magnitude of stress produced by the selected region ( 108 ).
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申请公布号 |
US7442597(B2) |
申请公布日期 |
2008.10.28 |
申请号 |
US20050049275 |
申请日期 |
2005.02.02 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
TSUI TING Y.;PAPA RAO SATYAVOLU S.;BU HAOWEN;KRAFT ROBERT |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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