| 摘要 |
An electrolytic copper plating solution and a method for forming a metal line of a semiconductor device using the same are provided to secure super peeling and leveling without an additional process and form an uniform copper wire by using N,N-Dimethyldithiocarbamic acid(3-sulfopropyl)ester(DPS) of low concentration. An electrolytic copper plating solution includes N,N-Dimethyldithiocarbamic acid(3-sulfopropyl)ester(DPS) of concentration of 1 muM to 30 muM to achieve super peeling and leveling in a single process. The solution includes the DPS, PEG, NaCl, and copper sulfate solution, and sulfuric acid solution. Concentration of PEG is 50 muM to 200 muM. Concentration of NaCl is 0.5 mM to 1.5 mM. Concentration of copper sulfate solution is 0.20M to 0.25M. Concentration of sulfuric acid solution is 1.0M to 1.8M.
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