| 摘要 |
A method for forming an STI(shallow trench isolation) of a semiconductor device is provided to avoid a loss of a liner nitride layer by depositing a liner nitride layer in forming a liner nitride layer in forming an isolation layer and by depositing and oxidizing polysilicon as a buffer on the liner nitride layer. A trench is formed in a portion of a semiconductor substrate(110) reserved an isolation region. A sidewall oxide layer is formed on the surface of the trench. A liner nitride layer(118) is formed on the surface of the semiconductor substrate including the trench. A polysilicon layer(120) is formed on the resultant structure. An oxide layer for an isolation layer is formed on the resultant structure. A CMP process using the nitride layer as an etch stop layer is performed on the resultant structure to planarize the resultant structure. A wet etch process can be performed to remove the liner nitride layer remaining on the semiconductor substrate. An oxide process is performed on the resultant structure to oxidize the polysilicon layer.
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