发明名称 METHOD FOR FABRICATING IN PHOTO MASK
摘要 <p>A method for fabricating a photo mask is provided to prevent haze defects caused by a reaction of air and ionic molecules by blocking the ionic molecules from the outside through a protective layer. A light blocking layer and a resist layer are sequentially formed on a mask substrate(100). A light blocking layer pattern(111) and a resist layer pattern are formed by using an electronic beam lithography. A region of the mask substrate exposed by the light blocking layer pattern is a light transmission region, and a region with the light blocking layer pattern formed there on is a light blocking region. A protective layer(130) is formed on the mask substrate and the light blocking layer pattern. The protective layer is formed with a nitride layer through CVD(Chemical Vapor Deposition) or sputtering. A pellicle is formed to face the light blocking layer pattern. The pellicle includes a pellicle layer(140) and a frame(141) supporting the pellicle layer. An air hole is arranged on a lateral side of the frame.</p>
申请公布号 KR20080084371(A) 申请公布日期 2008.09.19
申请号 KR20070026038 申请日期 2007.03.16
申请人 HYNIX SEMICONDUCTOR INC. 发明人 WOO, SUNG HA
分类号 H01L21/027 主分类号 H01L21/027
代理机构 代理人
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