| 摘要 |
<p>A method for fabricating a transistor of a semiconductor device is provided to improve the driving capability of a transistor by guaranteeing more drain current. A first conductive layer(202) is formed on a semiconductor substrate(200). An ion implantation process can be performed to form a well junction(204) in the first conductive layer. An ion implantation process for controlling a threshold voltage can be performed to form a threshold voltage control layer(206) in the well junction. The first conductive layer and the semiconductor substrate are partially etched to form a trench. An isolation layer is formed in the trench to have a step with the first conductive layer. An insulation layer is formed on the first conductive layer and the isolation layer. A second conductive layer(212) is formed on the insulation layer. The second conductive layer and the insulation layer are etched to form a gate(216).</p> |
