| 摘要 |
<p>An exposure mask for a capacitor pattern is provided to check a capacitor characteristic even if the field size of an exposure mask for a capacitor pattern is changed, by forming a capacitor characteristic test pattern in the same position of an exposure mask for a capacitor pattern and an exposure mask for a lower layer pattern. An exposure mask(200) for a capacitor pattern includes a field shot region(220) for forming a capacitor pattern in the center of a wafer, a die shot region(230) for forming the capacitor pattern in a net die region positioned outside the wafer, and a capacitor pattern vernier formed in an out frame region adjacent to the die shot region. A capacitor characteristic test pattern(224) can be positioned in a scribe lane in the field shot region.</p> |
