| 摘要 |
Method of fabricating an electronic substrate comprising steps of: (A) selecting first base layer; (B) depositing first etchant resistant barrier layer onto first base layer; (C) building up a first half stack of alternating conductive layers and insulating layers, the conductive layers being interconnected by vias through insulating layers; (D) applying second base layer onto first half stack; (E) applying protective coating of photoresist to second base layer; (F) etching away first base layer; (G) removing protective coating of photoresist; (H) removing first etchant resistant barrier layer; (I) building up second half stack of alternating conductive layers and insulating layers, conductive layers being interconnected by vias through insulating layers, wherein second half stack has lay up substantially symmetrical to first half stack; (J) applying insulating layer onto second half stack, (K) removing second base layer, and (L) exposing ends of vias on outer surfaces of stack and applying terminations thereto. |
